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In situ <t>c‐AFM</t> characterizations of the ion crowding effect in a single NP. (a) Schematic illustration of the experimental setup. (b) SEM image of a c‐AFM tip used in memristor measurements. (c) Zoom‐in view of the tip in (b). (d) Local I – V sweep between 0 and ‐6 V at scanning rate of 0.2 V/s. (e) AFM image (top) of local morphology after negative voltage sweeps at three consecutive locations. <t>The</t> <t>3D</t> topographical image of a typical protrusion is shown in the bottom image. (f) Height profile of a single protrusion. (g) Local I – V sweep between 0 and +3 V at scanning rate of 0.2 V/s. (h) Local morphology (top) after positive voltage sweeps at three consecutive locations. Bottom: 3D topographical image of a typical indentation. (i) Height profile of a single indentation. Scale bars: (b) 3 µm, (c) 50 nm, (e) 400 nm, (h) 200 nm.
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In situ c‐AFM characterizations of the ion crowding effect in a single NP. (a) Schematic illustration of the experimental setup. (b) SEM image of a c‐AFM tip used in memristor measurements. (c) Zoom‐in view of the tip in (b). (d) Local I – V sweep between 0 and ‐6 V at scanning rate of 0.2 V/s. (e) AFM image (top) of local morphology after negative voltage sweeps at three consecutive locations. The 3D topographical image of a typical protrusion is shown in the bottom image. (f) Height profile of a single protrusion. (g) Local I – V sweep between 0 and +3 V at scanning rate of 0.2 V/s. (h) Local morphology (top) after positive voltage sweeps at three consecutive locations. Bottom: 3D topographical image of a typical indentation. (i) Height profile of a single indentation. Scale bars: (b) 3 µm, (c) 50 nm, (e) 400 nm, (h) 200 nm.

Journal: Advanced Science

Article Title: Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors

doi: 10.1002/advs.202524258

Figure Lengend Snippet: In situ c‐AFM characterizations of the ion crowding effect in a single NP. (a) Schematic illustration of the experimental setup. (b) SEM image of a c‐AFM tip used in memristor measurements. (c) Zoom‐in view of the tip in (b). (d) Local I – V sweep between 0 and ‐6 V at scanning rate of 0.2 V/s. (e) AFM image (top) of local morphology after negative voltage sweeps at three consecutive locations. The 3D topographical image of a typical protrusion is shown in the bottom image. (f) Height profile of a single protrusion. (g) Local I – V sweep between 0 and +3 V at scanning rate of 0.2 V/s. (h) Local morphology (top) after positive voltage sweeps at three consecutive locations. Bottom: 3D topographical image of a typical indentation. (i) Height profile of a single indentation. Scale bars: (b) 3 µm, (c) 50 nm, (e) 400 nm, (h) 200 nm.

Article Snippet: The in situ c‐AFM measurements were carried out using a multimode AFM system (MFP‐3D origin+, Asylum Research).

Techniques: In Situ